Spatially Resolved Decoherence of Donor Spins in Silicon Strained by a Metallic Electrode
نویسندگان
چکیده
By taking advantage of how strain gradients affect spin energy levels, experiments provide a spatial map coherence times donor atoms in silicon---necessary information for many quantum-based applications.
منابع مشابه
Quantum decoherence dynamics of divacancy spins in silicon carbide
Long coherence times are key to the performance of quantum bits (qubits). Here, we experimentally and theoretically show that the Hahn-echo coherence time of electron spins associated with divacancy defects in 4H-SiC reaches 1.3 ms, one of the longest Hahn-echo coherence times of an electron spin in a naturally isotopic crystal. Using a first-principles microscopic quantum-bath model, we find t...
متن کاملHigh precision quantum control of single donor spins in silicon.
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using tight-binding and band minima basis approaches and compared to the recent precision measurements. In contrast with previous effective mass-based results, the quadratic Stark coefficient obtained from both theories agrees closely with the expe...
متن کاملStark tuning of donor electron spins in silicon.
We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine...
متن کاملHigh-field measurements of electron decoherence time in metallic nanowires: switching off magnetic impurity spins.
We report low-temperature measurements of electron decoherence time in a series of pure gold wires, 18 nm thick and 30 nm wide. At fields up to 15 T, large enough to polarize any concentration of magnetic impurity spins, conductance fluctuation measurements show almost no temperature dependence of the decoherence time below 300 mK, both in the correlation field for interference and the root-mea...
متن کاملStrained Silicon Photonics
A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review X
سال: 2021
ISSN: ['2160-3308']
DOI: https://doi.org/10.1103/physrevx.11.031036